Sputtering Targets

Material for Optical device

for recording films	Ge+α(Bi, In…), GeSeTe, AgGeSbTe etc.
for protective films	ZnS-SiO2, Al2O3, Si3N4, B-Si, ZnO+α, SiC, SiAlNx, SiO2 etc.
for reflective films	Al-Ti, Al-Cr, Al-Ta, Ag合金, Al合金 etc.
for interface layer	Cr2O3, GeAl, GeCr, SiC, ZnO, AlN,TiO2,ZrO2, Nb2Ox, Nb-SiO2, etc.
for Antirelection films	High-n:TiO2, Nb2Ox, SrTiO3 etc. Low-n:SiO2, SiAlN etc.
次世代記録膜用	FePtAg-C, FePtCu-C, FePtAg-SiO2, FePtCu-SiO2

Material for Magnetic record and HARD DISK

for recording films	CoCrPt-SiO2(*), FePt, CoCrPt-O,
	CoCrPt-TiO2, Fe3O4, CoCrPt-B
	FePt-MgO(-SiO2,-ZrO2) etc
for Soft magnetic undercoat films	Fe-Si, Fe-C, Fe-Ta-N, Fe-Al-Si,
	Co-Zr-Nb, ZnFe2O4, (Zn,Ni)Fe2O4, etc.
for antiferromagnetic films	Ru-Rh, Pt-Mn, Ir-Mn etc.
for undercoat films	CoCr-SiO2, CoCr-TiO2, Ru-SiO2,
	Ru, Ru-Co, Ni-Ta etc.
for seed films	MgO, CoO, NiO, Ni-Al etc.
for half-metal ferromagnetic films	(La1-x Srx)MnO3, Co2FeSi
	Sr2FeMoO6, Sr2CrReO6, Ca2FeReO6, etc

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高磁気異方性エネルギー、且つ低ノイズとすでに立証されています。

Material for Display

external moisture-barrier/protective film	Si-α, Si3N4, Si3N4-Si etc.
Hydrophilic film	SrO2, Sr(DPM)2, CaOx, Ca(DPM)2 etc.
Electron-Injection Layer	CsF, LiF, LiO2, アルカリ金属媒体 etc.
Metal Electrode	Al, Ag, Cu, Mg-Al, Mg-Ag, Pt-Cr, etc.
Transparent Electrode	ITO, ZnO-X, TiO2-X, SnO2-X etc.
for Antirelection films	High-n:TiO2, Nb2Ox, SrTiO3 etc.
	Low-n:SiO2, SiAlN etc.

Superconductor

Y type	YBa2Cu3Ox, Y2BaCuOx, Substitution type
Nd type	NdBa2Cu3Ox, Nd4Ba2Cu2Ox, Substitution type
Sm type	SmBa2Cu3Ox, Sm2BaCuOx, Substitution type
Gd type	GdBa2Cu3Ox, Gd2BaCuOx, Substitution type
Mixed Crystal type	RE-BaCuOx (RE:Nd, Sm, Eu, Gd, Substitution type)
Mn type	La1-xSrxMnO3, Pr1-xCaxMnOy
Buffer layer	SrTiO3, LaAlO3, MgO, YSZ
	CeO2, BaSnO3,
	BaO2, CaO2, SrO2
	(Sr1-xLax)TiO3
	SrAl0.5Ta0.5O3, SrAl0.5Nb0.5O3

Material for Ferroelectric Substance

For Gate Insulator	La2O3, La2O3-Mox, HfO2, Y2O3
	HfO2-Al2O3 etc.
For Ferroelectric Substance	PZT：Pb(Zr, Ti)O3, PZTN：Pb(Zr,Ti)Nb2O8
	PLZT：(Pb, La)(Zr, Ti)O3, PLT：PbLaTiOx
	KTN：K(Ta, Nb)O3, BLT：(Bi, La)4Ti3O12
	SBT：SrBi2Ta2O9,
	BNT：(Bi, Nd)4Ti3O12,
For Electrode	Pt, Ir, Ru, RuO2, SrRuO3
	(La, Sr)CoO3, Ti, TiN, TiOx, Ta, etc.
For Thin Film Capacitor	BST：(Ba, Sr)TiO3
	STO：SrTiO3

Material for Cells

空気極材料	LSM, SSC, LaNiO3, LSC-YSZ
	Bi2Ru2O7, SSC-SDC etc.
燃料極材料	SDC, YDC, SDZ, YSZ
	BCY:BaCeYO3 etc.
電解質材料	Ni-SDC, Ni-YSZ, Ni-BCY
	Ni-YSZ etc.

Thin-film lithium-ion battery

正極材料	LiNiO2, LiCoPO4, Li3PO4
	LiMn2O4 , LiCo1/3Ni1/3Mn1/3O2
	LiFePO4, LiCoO2,　etc.
負極材料	Si-Co, Si-Cu, Sn-Si, Sn-Mg,
	Sn-Si-Cu, Li4Ti5O12 etc
電解質	Li3PO4, Li6BaLa2Ta2O12 etc

Various types of thin-film solar cells

透明電極	ZnO-Al2O3,　SnO-SB2O3 etc.
反射防止膜	NbOx, MgF2, SiO2-TiO2,
	MgF2-SiO2 etc.
バッファ層	ZnS, ZnO etc
光吸収層	Cu-In, Cu-Ga, Si-Ge etc
透明半導体層	SnO2, InGaZnO4, CuAlO2 etc